This announcement was made in conjunction with Micron’s revelation of the world’s fastest HBM3 Gen2 memory, boasting an astonishing bandwidth of 1.2TB/s. Micron’s revolutionary 32GB DDR5 memory circuit will be expertly crafted using the company’s advanced 1β (1-beta) process, eliminating the need for extreme ultraviolet lithography.
Though Micron has remained tight-lipped about the data rates of the 32GB chips, the introduction of these chips opens up an exciting realm of possibilities, potentially paving the way for 1TB DDR5 modules. However, Micron has opted for a measured approach, planning to offer 128GB modules in the near future rather than rushing to achieve maximum capacity memory.
Referred to as HBM3 Gen2 memory, this innovation is defined by its remarkable total bandwidth of 1.2TB/s across an 8-level stack, with a maximum capacity of 24GB (soon to be expanded to 36GB circuits). Notably, this new product boasts a 2.5-fold increase in energy efficiency compared to its predecessor, the HBM2E.
Micron’s strategic roadmap also includes the highly anticipated HBMNex memory, potentially named HBM4. This next-generation memory is projected to deliver an astounding 2+ TB/s bandwidth and offer capacities of up to 64GB by the year 2026.
Micron’s relentless pursuit of excellence in memory technology is a testament to its commitment to pushing boundaries and revolutionizing the industry. As the company continues to unveil groundbreaking advancements, the future of memory technology is poised for unprecedented growth and innovation.
